Researchers have developed a new light-emitting memory device by integrating a resistive random-access memory with a light-emitting electrochemical cell that are both based on perovskite. The results are promising for faster data storage and reading in future electronic devices and open a new avenue of applications for perovskite optoelectronics.

By integrating a light-emitting electrochemical cell with a resistive random-access memory that are both based on perovskite, the team achieved parallel and synchronous reading of data both electrically and optically in a ‘light-emitting memory.’

At the most fundamental level, digital data is stored as a basic unit of information known as a bit, which is often represented as either a one or a zero. Thus, the pursuit of better data storage comes down to finding more efficient ways to store and read these ones and zeros.

While flash memory has become extremely popular, researchers have been searching for alternatives that could further improve speed and simplify fabrication.

One candidate is nonvolatile resistive random-access memory, or RRAM. Instead of storing charge in transistors like in flash memory, resistive memory uses materials that can switch between states of high and low resistance to represent ones and zeros.

«However, the electrical measurements needed to check the resistance and read zeros and ones from RRAM can limit the overall speed,» explains Chun-Chieh Chang, professor at National Taiwan Normal University and one of the corresponding authors of the study published in Nature Communications.

Story Source: Materials provided by Kyushu University. Note: Content may be edited for style and length.